Power MOSFET
FEATURES
•Isolated Package
•H igh Voltage Isolation = 2.5 kV RMS  (t = 60 s;
f = 60 Hz)•Sink to Lead Creepage Distance = 4.8 mm •P-Channel
•Dynamic dV/dt Rating
•Low Thermal Resistance
•Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.V DD  = - 50 V, starting T J  = 25 °C, L = 26 mH, R G  = 25 Ω, I AS  = - 6.1 A (see fig. 12).
c.I SD  ≤ - 11 A, dI/dt ≤ 150 A/µs, V DD  ≤ V DS , T J  ≤ 150 °C.
d.  1.6 mm from cas
e.
PRODUCT SUMMARY
V DS  (V)- 200R DS(on) (Ω)V GS  = - 10 V 0.50
Q g  (Max.) (nC)44
Q gs  (nC)7.1
Q gd
(nC)27
Configuration
Single
ORDERING INFORMATION
Package TO-220 FULLPAK Lead (Pb)-free IRFI9640GPbF SiHFI9640G-E3SnPb
IRFI9640G SiHFI9640G
ABSOLUTE MAXIMUM RATINGS T C  = 25 °C, unless otherwise noted
PARAMETER SYMB O L LIMIT UNIT
Drain-Source Voltage V DS
- 200V
Gate-Source Voltage V GS  ±
20 Continuous Drain Current V GS  at - 10 V T C  = 25 °C I D
- 6.1
A T C  = 100 °C - 3.9
Pulsed Drain Current a I DM  - 24
Linear Derating Factor 0.32W/°C Single Pulse Avalanche Energy b E AS 650mJ
Repetitive Avalanche Current a I AR - 6.1  A
Repetitive Avalanche Energy a E AR    4.0mJ Maximum Power Dissipation T C  = 25 °C P D 40W Peak Diode Recovery dV/dt c dV/dt - 5.0V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature)for 10 s 300d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may apply
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
L TYP.MAX.UNIT Maximum Junction-to-Ambient R thJA -65°C/W
Maximum Junction-to-Case (Drain)
R thJC
-  3.1
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
pending
Fig. 12b - Unclamped Inductive Waveforms

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