JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD                                                    TO-92 Plastic-Encapsulate Transistors
S9014    TRANSISTOR
(NPN)
FEATURES  z  High Total Power Dissipation.(P C =0.45W)
z  High h FE  and Good Linearity z  Complementary to S9015
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test  conditions
M in    T yp      Max      Unit
Collector-base breakdown voltage  V (BR)CBO
I C =100μA, I E =0 50  V
Collector-emitter breakdown voltage  V (BR)CEO  I C = 1mA, I B =
0 45  V Emitter-base breakdown voltage V (BR)EBO  I E =100μA, I C =
0 5  V Collector cut-off current  I CBO  V CB =50V, I E =
0  0.1 μA Collector cut-off current  I CEO  V CE =35V, I B =
0  0.1 μA Emitter cut-off current  I EBO  V EB = 5V, I C =0  0.1 μA DC current gain
h FE
V CE =5V, I C = 1mA
60  1000  Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 5mA  0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B = 5mA
1
V
Transition frequency
f T
V CE =5V, I C = 10mA f=30MHz
150  MHz
s parameterCLASSIFICATION OF  h FE(1) Rank    A B C D Range
60-150 100-300 200-600 400-1000
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
A,Apr,2011
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【南京南山半导体有限公司 — 长电三极管选型资料】
100
1000
0200
400
600800
1000
1200
25
50
75
100
125
1
10
1
10
100
1000
8
7
5
43
2
61
0C O L L E C T O R  C U R R E N T    I C    (m A )
Static Characteristic
5000
B A S E -E M M I T E R  V O L T A G E    V B E    (m V )
B A S E -E M I T T E R  S A T U R A T I O N V O L T A G E    V B E s a t    (m V )
AMBIENT TEMPERATURE    Ta    ()
℃S9014
Typical Characterisitics
T R A N S I T I O N  F R E Q U E N C Y    f T    (M H z )
COLLECTOR CURRENT    I C    (mA)
60
I C
h FE    —— A,Apr,2011
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】

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