BYV32EB-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 2 March 2009Product data sheet 1.Product profile
1.1General description
Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic
package.
1.2Features and benefits
High reverse voltage surge capability  High thermal cycling performance
Low thermal resistance  Soft recovery characteristic minimizes power consuming oscillations
Surface-mountable package
Very low on-state loss
1.3Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4Quick reference data
Table 1.Quick reference
Symbol Parameter Conditions Min Typ Max Unit V RRM repetitive peak reverse voltage--200V
I O(AV)average output current square-wave pulse; δ=0.5;
T mb≤115°C; both diodes conducting;
see Figure 1; see Figure 2
--20A
I RRM repetitive peak reverse current t p=2µs; δ=0.001--0.2A
V ESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins--8kV Dynamic characteristics
profile中文
t rr reverse recovery time I F=1A; V R=30V;dI F/dt=100A/µs;
T j=25°C; ramp recovery; see Figure 5
-2025ns
I R=1A;I F=0.5A;T j=25°C; measured
at reverse current = 0.25 A; step
recovery; see Figure 6
-1020ns
Static characteristics
V F forward voltage I F=8A; T j=150°C; see Figure 4-0.720.85V
2.Pinning information
[1]
it is not possible to make a connection to pin 2 of the SOT404 package
3.Ordering information
Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol
1A1anode 1SOT404                            (D2PAK)
2K cathode [1]
3A2anode 2
mb
K
mounting base; cathode
mb
1
3
2sym125
Table 3.Ordering information Type number Package
Name Description
Version BYV32EB-200D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
SOT404
4.Limiting values
Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit V RRM repetitive peak reverse voltage
-200V V RWM crest working reverse voltage -200V V R reverse voltage DC
-200V I O(AV)average output current
square-wave pulse; δ=0.5; T mb ≤115°C; both diodes conducting; see Figure 1; see Figure 2-20A I FRM repetitive peak forward current
δ=0.5; t p =25µs; T mb ≤115°C; per diode -20A I FSM
non-repetitive peak forward current
t p =8.3ms; sine-wave pulse; T j(init)=25°C; per diode
-137A t p =10ms; sine-wave pulse; T j(init)=25°C;per diode
-125A I RRM repetitive peak reverse current
δ=0.001; t p =2µs -0.2A I RSM non-repetitive peak reverse current t p =100µs
-0.2A T stg storage temperature -40150°C T j junction temperature
-150°C V ESD
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 k Ω; all pins -8
kV
5.Thermal characteristics
6.Characteristics
Table 5.Thermal characteristics Symbol Parameter
Conditions
Min Typ Max Unit R th(j-mb)
thermal resistance from junction to mounting base with heatsink compound; both diodes conducting --  1.6K/W with heatsink compound; per diode; see
Figure 3--  2.4K/W R th(j-a)
thermal resistance from junction to ambient
minimum footprint FR4 board -50
-K/W
Table 6.Characteristics Symbol Parameter Conditions
Min Typ Max Unit Static characteristics
V F forward voltage I F =8A; T j =150°C; see Figure 4-0.720.85V I F =20A; T j =25°C -1  1.15V I R
reverse current
V R =200V; T j =25°C -630µA V R =200V; T j =100°C
-0.2
0.6
mA
Dynamic characteristics Q r recovered charge I F =2A; V R =30V;dI F /dt =20A/µs -812.5nC t rr
reverse recovery time
I F =1A; V R =30V;dI F /dt =100A/µs; ramp recovery; T j =25°C; see Figure 5-2025ns I F =0.5A; I R =1A; measured at reverse current = 0.25 A; step recovery; T j =25°C; see Figure 6
-10
20
ns
V FR
forward recovery voltage
I F =1A; dI F /dt =10A/µs; see Figure 7
--1V
7.Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT404
Fig 8.Package outline SOT404 (D2PAK)

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