专利名称：Semiconductor structure having a voltage level shifter
发明人：Simmons, George Houston
申请号：EP83201468.2
申请日：19831014
公开号：EP0106413B1
公开日：
typec转dp19890118
专利内容由知识产权出版社提供
摘要：A voltage level shifter has N enhancement-mode FET's (Q1, Q2, and Q3) whose polarities are the same in the case where N is greater than 1 with the drain of each FET except the Nth FET coupled to the source of the next FET. Each FET has its drain coupled to its gate. An input voltage is supplied to the source of the first FET (Q1). An output voltage at a different level is taken from the drain of the Nth FET (Q3). In the structure for the level shifter, the source (S1, S2, or S3) and drain (D1, D2, or D3) of each FET are of a first conductivity type and lie in a well (20) of an opposite second conductivity type that lies in a semiconductive substrate region (16) of the first conductivity type. In the semiconductor structure a reverse-biased diode (DP) is coupled between a supply of a fixed reference voltage (Vss) and the channel of each FET. The well/diode extends the range of the input voltage.
申请人：N.V. PHILIPS' GLOEILAMPENFABRIEKEN
代理机构：Veerman, Jan Willem
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