MBT3906DW1T1Dual General Purpose Transistor
The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.
Features
•h FE , 100−300
•Low V CE(sat), ≤ 0.4 V •Simplifies Circuit Design •Reduces Board Space
•Reduces Component Count
•Available in 8 mm, 7−inch/3,000 Unit Tape and Reel •
Pb−Free Package is Available
MAXIMUM RATINGS
Maximum ratings applied to the device are individual stress limit values (not normal operating conditi
ons) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
recommended footprint.
Device Package Shipping †ORDERING INFORMATION
MBT3906DW1T1SOT−3633000 Units/Reel MBT3906DW1T1G
SOT−363(Pb−Free)
3000 Units/Reel
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.
onsemi
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
SWITCHING CHARACTERISTICS
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
10 < t 1 < 500 * T otal shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.05.0
7.0101.00.1
Figure 4. Charge Data
I C , COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.07.01020305070100200
C A P A C I T A N C E  (p F )
1.0
2.0
3.0  5.07.010
200.20.3
0.50.7T J  = 25°C T J  = 125°C
Figure 5. Turn−On Time I C , COLLECTOR CURRENT (mA)
7010020030050050T I M E  (n s )
1.0
2.0
3.0
10
20
705
100
Figure 6. Fall Time
I C , COLLECTOR CURRENT (mA)
5.07.030
50200
1030720
1.0
2.0
3.010*******
5.07.030
50200
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE  = −5.0 Vdc, T A  = 25°C, Bandwidth = 1.0 Hz)
Figure 7. f, FREQUENCY (kHz)
2.0
3.04.0
5.01.00.1
Figure 8.
R g , SOURCE RESISTANCE (k OHMS)
N F , N O I S E  F I G U R E  (d B )
1.0
2.0  4.01020400.2
0.4
01000.1  1.0  2.0  4.01020400.2
0.4100
h PARAMETERS
(V CE  = −10 Vdc, f = 1.0 kHz, T A  = 25°C)
Figure 9. Current Gain
I C , COLLECTOR CURRENT (mA)
70100200
300
50
Figure 10. Output Admittance
I C , COLLECTOR CURRENT (mA)
h    , D C  C U R R E N T  G A I N
h    , O U T P U T  A D M I T T A N C E  (  m h o s )
Figure 11. Input Impedance I C , COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
timeout of 5000ms exceededI C , COLLECTOR CURRENT (mA)
30
100501020
2.0
3.05.07.0101.00.1
0.2
1.0
2.0  5.00.510
0.30.5  3.0
0.72.05.010201.00.2
0.5o e h    , I N P U T  I M P E D A N C E  (k  O H M S )
i e 0.10.2
1.0
2.0  5.010
0.30.5  3.00.10.2
1.0
2.0  5.010
0.30.5  3.07
5
0.10.2
1.0
2.0  5.010
0.30.5  3.0
f e m 70300.77.00.77.07.0
3.00.70.30.77.00.77.0h    , V O L T A G E  F E E D B A C K  R A T I O  (x  10  )
r e −4
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
I C , COLLECTOR CURRENT (mA)
0.30.50.71.02.0
0.2
0.1
h      , D C  C U R R E N T  G A I N  (N O R M A L I Z E D )
0.5  2.0  3.01050700.20.30.1
1001.0
0.7200
30205.07.0F E
Figure 14. Collector Saturation Region
I B , BASE CURRENT (mA)
0.4
0.60.8
1.0
0.20.1
V      , C O L L E C T O R  E M I T T E R  V O L T A G E  (V O L T S )0.5  2.0  3.010
0.20.30
1.00.7  5.07.0C
E
0.070.050.030.020.01
Figure 15. “ON” Voltages I C , COLLECTOR CURRENT (mA)
0.4
0.6
0.81.00.2Figure 16. Temperature Coefficients
I C , COLLECTOR CURRENT (mA)
V , V O L T A G E  (V O L T S )
− 0.5
00.51.0− 1.0
− 1.5− 2.0
, T E M P E R A T U R E  C O E F F I C I E N T S  (m V /  C )
°V q

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