专利名称：Nitrogen gas flow rate，发明人：坂本 仁志，上田 憲照，杉野 隆申请号：JP2001093502
申请日：20010328
公开号：JP4764559B2
公开日：
20110907
reaction rate
专利内容由知识产权出版社提供
摘要：PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a boron nitride film. SOLUTION: After a plasma 10 is generated in a film forming chamber 2 and a nitrogen gas 11 is mainly excited therein, a diborane gas diluted by a hydrogen gas is mixed for reaction and a boron nitride film 15 is formed on a substrate 4. The boron nitride film 15 maintaining low relative permittivity is formed by suppressing an amorphous phase from occurring on a boundary surface with an excessive supply of the nitrogen gas 11 at an initial stage of film forming, and by further improving the hygroscopicity on the boundary surface of the substrate.
申请人：杉野 隆，株式会社渡辺商行
地址：大阪府豊中市上新田３－４－１－３２２，東京都中央区日本橋室町４丁目２番１６号国籍：JP,JP
代理人：福森 久夫
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