专利名称：VAPOR GROWTH REACTION TUBE 发明人：YOSHIKAWA AKIO,SUGINO TAKASHI 申请号：JP19576084
申请日：19840920
公开号：JPS6174328A
公开日：
19860416
专利内容由知识产权出版社提供
摘要：PURPOSE:To obtain the semiconductor thin film having the low degree of irregularity in characteristics by a method wherein the title reaction tube is constituted by two chambers of the inner side and the outer side, and the cooling chamber wherein the outside liquid is filled is composed of a plurality of chambers. CONSTITUTION:A vapor growth reaction tube 22 is composed of a semiconductor gas introducing hole 10, a gas exhausting hole 11, a high frequency induction heating coil 13, a crystal growth substrate 14, a susceptor 15, a susceptor retaining rod 16, a thin film layer 17, the inner wall 18 of the inner side chamber of the reaction tube, the chamber 19 of the outer side of the reaction tube, a cooling fluid introducing hole 20, a cooling fluid exhausting hole 21m a cooling fluid introducing hole 23, a cooling fluid exhausting hole 24, the chamber 25 located at the upper part outside the reaction tube 22, and the chamber 26 on the lower side of the reaction tube 22. When a crystal growth process is performed, a crystal growth substrate 14 is arranged, it is heated up by the high frequency heating coil 13, and the crystal growth is performed by heating the crystal growth substrate 14 mainly by heat conduction through the susceptor 15. By providing two cooling chambers on the inner side and the outer side of the vapor growth reaction tube, a crystal growth can be performed in excellent controllability, uniformity and reproducibility.
reaction rod申请人：MATSUSHITA ELECTRIC IND CO LTD 更多信息请下载全文后查看

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