专利名称：MANUFACTURE OF FORCE-ELECTRICITY CONVERSION ELEMENT
发明人：KIUCHI MITSUHIRO,KANEKO YOSHIKAZU 申请号：JP5816985
申请日：19850325
公开号：JPS61218175A
公开日：
19860927
专利内容由知识产权出版社提供
reaction mass
摘要：PURPOSE:To mass-produce the small-sized elements having good characteristics and a good erosion-resistance at low cost by forming an insulating film and a semiconductor piezoelectric resistance element on a substrate composing a distortion generating part by plasma CVD. CONSTITUTION:After arranging a diaphragm 1 composing a distortion generating part 1a with a thin plate part on a substrate electrode 12 in a reaction chamber 11 of a plasma CVD device 10, the air in a reaction chamber 11 is exhausted. SiH4 gas and N2O gas are introduced into the reaction chamber 11 from the supply sources 16 and 17 and a high-frequency field is applied by the substrate electrode 12 and a high-frequency electrode so as to activate the reactive gas, resulting in the deposition of a silicon oxide film 2 as an insulating film. After the residual gas is removed completely, SiH4 gas and B2H6 gas are introduced and the similar reaction is caused to form a semiconductor piezoelectric resistance thin film 3 consisting of silicon boride. Consequently the insulating film and the semiconductor piezoelectric resistance element can be manufactured by the same device so that the element of good characteristics can be mass-produced at low cost.
申请人：NAGANO KEIKI SEISAKUSHO:KK
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