专利名称：Method of forming a semiconductor device having a titanium salicide shallow junction
diffusion layer
发明人：Tadahiko Horiuchi,Hiroshi Ito,Naohiko
Kimizuka
申请号：US08/831002
申请日：19970331
公开号：US06001737A
公开日：
19991214
专利内容由知识产权出版社提供
摘要：A method of recovering crystal defects in an impurity doped diffusion silicon layer in contact with a C54 crystal phase titanium silicide layer includes the step of causing a cohesion reaction of the C54 crystal phase titanium silicide layer by heat treating the C54 crystal phase titanium silicide layer so as to cause a vacancy-diffusion of lattice-vacancy of silicon atoms from the C54 crystal phase titanium silicide layer into the impurity doped diffusion silicon layer including the crystal defects while maintaining the continuity of the C54 crystal phase titanium silicide layer.
申请人：NEC CORPORATION
代理机构：Young & Thompson
reaction diffusion
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