专利名称：H2S REACTIVE ANNEAL TO REDUCE
CARBON IN NANOPARTICLE-DERIVED THIN
FILMS
发明人：KIRKHAM, Paul,ALLEN, Cary,WHITELEGG, Stephen
申请号：GB2015/050227
申请日：20150130
公开号：WO2015/114356A1
公开日：
reactive to20150806
专利内容由知识产权出版社提供
专利附图：
摘要：A method for preparing CIGS absorber layers using CIGS nanoparticles on a
substrate comprises one or more annealing steps that involve heating the CIGS nanoparticle film(s) to dry the film and possibly to fuse the CIGS nanoparticles together to form CIGS crystals. Generally, at least the final annealing step will induce particle fusion to form CIGS crystals. Reactive gas annealing has been found to facilitate the growth of larger grains in the resulting CIGS absorber layers and lead to improved photovoltaic performance of those layers. It is suspected that the presence of carbon in CIGS nanoparticle films hinders grain growth and limits the size of crystals which can be obtained in CIGS films upon annealing. It has been discovered that exposing the CIGS nanoparticle films to a reactive atmosphere containing sulfur can decrease the amount of carbon in the film, resulting in the growth of larger CIGS crystals upon annealing.
申请人：NANOCO TECHNOLOGIES LTD
地址：46 Grafton Street Manchester M13 9NT GB
国籍：GB
代理人：MARKS & CLERK LLP
更多信息请下载全文后查看

版权声明：本站内容均来自互联网，仅供演示用，请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系QQ:729038198，我们将在24小时内删除。