等离子体刻蚀英语
English: Plasma etching, also known as dry etching or plasma processing, is a sophisticated technique used in semiconductor fabrication and material science for precisely etching patterns into various substrates. It involves using plasma, which is a state of matter consisting of ionized gases, to remove material from a solid surface. In a plasma etching process, the substrate to be etched is placed in a vacuum chamber, where it is bombarded with plasma containing reactive ions. These ions chemically react with the material on the substrate surface, breaking chemical bonds and removing material in a controlled manner. Plasma etching offers several advantages over traditional wet etching methods, including higher etching rates, better selectivity, and the ability to etch precise patterns with high aspect ratios. This technique plays a crucial role in the manufacturing of integrated circuits, microelectromechanical systems (MEMS), and nanotechnology devices, where precise control over material removal is essential for creating intricate structures at the micro- and nanoscale.
中文翻译:
reactive ion etching等离子体刻蚀，也称为干法刻蚀或等离子体加工，是在半导体制造和材料科学中用于精确刻蚀各种基板的复杂技术。它涉及使用等离子体，即由离子化气体组成的物质状态，从固体表面去除材料。在等离子体刻蚀过程中，待刻蚀的基板被放置在真空室中，接受含有反应离子的等离子体轰击。这些离子与基板表面上的材料发生化学反应，打破化学键并以可控的方式去除材料。与传统的湿法刻蚀方法相比，等离子体刻蚀具有诸多优势，包括更高的刻蚀速率、更好的选择性以及能够以高纵横比刻蚀精确图案的能力。这种技术在集成电路、微机电系统（MEMS）和纳米技术器件的制造中发挥着关键作用，其中对材料去除的精确控制对于在微观和纳米尺度上创建复杂结构至关重要。

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