reactive diluent专利名称：SF6/nitriding gas/oxidizer plasma etch system
发明人：Stephen M. Bobbio,Marie C.
Flanigan,Kenneth M. Thrun,Ralph L.
DePrenda
申请号：US06/668052
申请日：19841105
公开号：US04615764A
公开日：
19861007
专利内容由知识产权出版社提供
摘要：A gaseous mixture of SF.sub.6, a nitriding gas component and an oxidizer gas component is disclosed as an effective SiO.sub.2 etchant having enhanced selectively for use in either the plasma or reactive ion etch process. By adding an oxidizing gas to the SF.sub.6 nitriding gas plasma etchant, the selectively for SiO.sub.2 over silicon or polysilicon is marked improved. The optional addition of an inert diluent gas did not substantially change these results.
申请人：ALLIED CORPORATION
代理人：Arthur J. Plantamura,Jay P. Friedenson,Richard C. Stewart, II
更多信息请下载全文后查看

版权声明：本站内容均来自互联网，仅供演示用，请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系QQ:729038198，我们将在24小时内删除。