专利名称：Lateral uniformity in silicon recess etch
发明人：David Gerald Farber,Tom Lii
申请号：US12880959
reactive diluent申请日：20100913
公开号：US08507386B2
公开日：
20130813
专利内容由知识产权出版社提供
专利附图：
摘要：A method of etching recesses into silicon prior to formation of embedded silicon alloy source/drain regions. The recess etch includes a plasma etch component,using an etch chemistry of a primary fluorine-based or chlorine-based etchant, in
combination with a similar concentration of hydrogen bromide. The concentration of both
the primary etchant and the hydrogen bromide is relatively low; a diluent of an inert gas or oxygen is added to the reactive species. Loading effects on the undercut of the recess etch are greatly reduced, resulting in reduced transistor performance variation.
申请人：David Gerald Farber,Tom Lii
地址：Plano TX US,Plano TX US
国籍：US,US
代理人：Jacqueline J. Garner,Wade J. Brady, III,Frederick J. Telecky, Jr.
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