专利名称：A gate array
发明人：Monma, Hideo,Ishiguro, Masato,Kawano, Tetsuo
arduino字符串转数组
申请号：EP84401942.2
申请日：19840928
公开号：EP0136952B1
公开日：
19890503
专利内容由知识产权出版社提供
摘要：A gate array having a plurality of basic cells (12) each comprising a transistor whose gm is as low as one fifth to one twentieth of the gm of the transistors in the conventional gate array is disclosed. The low gm is provided by reducing the W/L ratio of the gate region of the transistor. The basic cell (12) comprising the transistor of the low gm is formed to replace the conventional basic cell at a specified position in a specified basic cell array 400. The transistor of low gm reduces the basic cells necessary for constituting a delay circuit, and eliminates need for the external resistive component which is formerly requisite when a pull-up or pull-down circuit or a monostable multivibrator is built in the gate array.
申请人：FUJITSU LIMITED
代理机构：Descourtieux, Philippe
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