专利名称：CONCURRENT MULTIPLE-DIMENSION WORD-ADDRESSABLE MEMORY
ARCHITECTURE
truncate多张表加逗号吗发明人：CHEN, Chih-Tung,KANG, Inyup,CHAIYAKUL, Viraphol
申请号：EP08772064.5
申请日：20080626
公开号：EP2165334B1
公开日：
20140423
专利内容由知识产权出版社提供
摘要：An N-dimension addressable memory is disclosed. The memory includes an Ndimension array of bit cells and logic configured to address each bit cell using NDimension Addressing (NDA), where N is at least two and the array of bit cells is addressable by N orthogonal address spaces. Each bit cell of the N-dimension addressable memory includes a bit storage element, N word lines, and N bit lines.
申请人：QUALCOMM INC
地址：US
国籍：US
代理机构：Dunlop, Hugh Christopher
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