June 16, 2008 LMP7732
2.9 nV/sqrt(Hz) Low Noise, Precision, RRIO Amplifier
General Description
The LMP7732 is a dual low noise, low offset voltage, rail-to-rail input and output, low voltage precision amplifier. The LMP7732 is part of the LMP® precision amplifier family and is ideal for precision and low noise applications with low voltage requirements.
This operational amplifier offers low voltage noise of 2.9 nV/ with a 1/f corner of only 3 Hz and low DC offset with a maximum value of ±40 µV, targeting high accuracy, low fre-quency applications. The LMP7732 has bipolar junction input stages with a bias current of only 1.5 nA. This low input bias current, complemented by the very low AC and DC levels of voltage noise, makes the LMP7732 an excellent choice for photometry applications.
The LMP7732 provides a wide GBW of 22 MHz while con-suming only 4 mA of current. This high gain bandwidth along with the high open loop gain of 130 dB enables accurate sig-nal conditioning in applications with high closed loop gain requirements.
The LMP7732 has a supply voltage range of 1.8V to 5.5V, making it an ideal choice for battery operated portable appli-cations.
The LMP7732 is offered in the 8-Pin SOIC and MSOP pack-ages.
The LMP7731 is the single version of this product and is of-fered in the 5-Pin SOT-23 and 8-Pin SOIC packages.Features
(Typical values, T
A
= 25°C, V
S
= 5V)
■Input voltage noise
—f = 3 Hz  3.3 nV/√Hz —f = 1 kHz  2.9 nV/√Hz ■Offset voltage (max)±40 µV ■Offset voltage drift (m
ax)±1.3 µV/°C ■CMRR130 dB ■Open loop gain130 dB ■GBW22 MHz ■Slew rate  2.4 V/µs ■THD @ f = 10 kHz, A V = 1, R L = 2 kΩ0.001%■Supply current  4.4 mA ■Supply voltage range  1.8V to 5.5V ■Operating temperature range−40°C to 125°C ■Input bias current±1.5 nA ■RRIO
Applications
■Thermopile amplifier
■Gas analysis instruments
■Photometric instrumentation
■Medical instrumentation
Typical Application
Thermopile Signal Amplifier
30015001
LMP® is a registered trademark of National Semiconductor Corporation.
© 2008 National Semiconductor Corporation300150www.national LMP7732 Low Noise, Precision, RRIO Amplifier
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.ESD Tolerance (Note 2) Human Body Model  For inputs pins only 2000V  For all other pins 2000V  Machine Model
200V  Charge Device Model 1000V V IN  Differential
±2V Supply Voltage (V S  = V + – V −)
6.0V Storage Temperature Range −65°C to 150°C Junction Temperature (Note 3)+150°C max
Soldering Information
Infrared or Convection (20 sec)
235°C  Wave Soldering Lead Temp. (10 sec)
260°C
Operating Ratings
(Note 1)
Temperature Range
−40°C to 125°C Supply Voltage (V S  = V + – V –)
1.8V to 5.5V
Package Thermal Resistance (θJA ) 8-Pin SOIC 190 °C/W  8-Pin MSOP
235°C/W
2.5V Electrical Characteristics
(Note 4)
Unless otherwise specified, all limits are guaranteed for T A  = 25°C, V + = 2.5V, V − = 0V, V CM  = V +/2, R L  >10 k Ω to V +/2. Bold-face  limits apply at the temperature extremes.
Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)
Units
V OS
Input Offset Voltage (Note 7)
V CM  = 2.0V  ±9±50±150μV
V CM  = 0.5V
±9±40±125TCV OS Input Offset Voltage Temperature Drift V CM  = 2.0V
±0.5±1.3μV/°C V CM  = 0.5V
±0.2±0.8 Input Offset Voltage Time Drift V CM  = 0.5V and V CM  = 2.0V  0.35 μV/month
I B
Input Bias Current
V CM  = 2.0V  ±1±30±45nA
V CM  = 0.5V
±12±50±75I OS
Input Offset Current
V CM  = 2.0V  ±1±50±75nA
V CM  = 0.5V
±11±60±80TCI OS Input Offset Current Drift V CM  = 0.5V and V CM  = 2.0V  0.0474 nA/°C
CMRR
Common Mode Rejection Ratio
0.15V ≤ V CM  ≤ 0.7V 0.23V ≤ V CM  ≤ 0.7V 10189120 dB 1.5V ≤ V CM  ≤ 2.35V 1.5V ≤ V CM  ≤ 2.27V
10599129 PSRR
Power Supply Rejection Ratio
2.5V ≤ V + ≤ 5V 111105129
dB
1.8V ≤ V + ≤ 5.5V
117 CMVR Common Mode Voltage Range Large Signal CMRR ≥ 80 dB 0    2.5V A VOL
Open Loop Voltage Gain
R L  = 10 k Ω to V +/2V OUT  = 0.5V to 2.0V 112104130 dB R L  = 2 k Ω to V +/2V OUT  = 0.5V to 2.0V
10990
119
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Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)
Units
V OUT
Output Voltage Swing High
R L  = 10 k Ω to V +/2 45075mV from either rail R L  = 2 k Ω to V +/2
135075Output Voltage Swing Low
R L  = 10 k Ω to V +/2 65075R L  = 2 k Ω to V +/2
95075I OUT
Output Current
Sourcing, V OUT  = V +/2V IN  (diff) = 100 mV 221231 mA Sinking, V OUT  = V +/2V IN  (diff) = −100 mV
151044 I S
Supply Current
V CM  = 2.0V    4.0  5.46.8mA
V CM  = 0.5V
4.6
6.2
7.8SR Slew Rate A V  = +1, C L  = 10 pF, R L  = 10 k Ω to V +/2V OUT  = 2 V PP
2.4 V/μs GBW Gain Bandwidth C L  = 20 pF, R L  = 10 k Ω to V +/2 21 MHz G M Gain Margin C L  = 20 pF, R L  = 10 k Ω to V +/2 14 dB ΦM Phase Margin C L  = 20 pF, R L  = 10 k Ω to V +/2 60 deg R IN Input Resistance
Differential Mode  38 k ΩCommon Mode
151 M ΩTHD+N Total Harmonic Distortion + Noise A V  = 1, f O  = 1 kHz, Amplitude = 1V  0.002 %e n
Input Referred Voltage Noise Density    f = 1 kHz, V CM  = 2.0V    3.0 nV/f = 1 kHz, V CM  = 0.5V    3.0 Input Voltage Noise
0.1 Hz to 10 Hz  75 nV PP i n
Input Referred Current Noise Density
f = 1 kHz, V CM  = 2.0V    1.1 pA/
f = 1 kHz, V CM  = 0.5V
2.3
3.3V Electrical Characteristics
(Note 4)
Unless otherwise specified, all limits are guaranteed for T A  = 25°C, V + = 3.3V, V − = 0V, V CM  = V +/2, R L  > 10 k Ω to V +/2. Bold-face  limits apply at the temperature extremes.
Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)
Units
V OS
Input Offset Voltage (Note 7)
V CM  = 2.5V  ±6±50±150μV
V CM  = 0.5V
±6±40±125TCV OS Input Offset Voltage Temperature Drift V CM  = 2.5V
±0.5±1.3μV/°C V CM  = 0.5V
±0.2±0.8 Input Offset Voltage Time Drift V CM  = 0.5V and V CM  = 2.5V  0.35 μV/month
I B
Input Bias Current
V CM  = 2.5V  ±1.5±30±45nA
V CM  = 0.5V
±13±50±77I OS
Input Offset Current
V CM  = 2.5V  ±1±50±70nA
V CM  = 0.5V
±11
±60±80
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LMP7732
Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)
Units TCI OS Input Offset Current Drift V CM  = 0.5V and V CM  = 2.5V  0.048 nA/°C
CMRR
Common Mode Rejection Ratio
0.15V ≤ V CM  ≤ 0.7V 0.23V ≤ V CM  ≤ 0.7V 10189120 dB 1.5V ≤ V CM  ≤ 3.15V 1.5V ≤ V CM  ≤ 3.07V
10599130 PSRR
Power Supply Rejection Ratio
2.5V ≤ V + ≤ 5.0V 111105129
dB
1.8V ≤ V + ≤ 5.5V
117 CMVR Common Mode Voltage Range Large Signal CMRR ≥ 80 dB 0    3.3V A VOL
Open Loop Voltage Gain
R L  = 10 k Ω to V +/2V OUT  = 0.5V to 2.8V 112104130 dB R L  = 2 k Ω to V +/2V OUT  = 0.5V to 2.8V
11092119 V OUT
Output Voltage Swing High
R L  = 10 k Ω to V +/2 55075mV from either rail R L  = 2 k Ω to V +/2
145075Output Voltage Swing Low
R L  = 10 k Ω to V +/2 95075R L  = 2 k Ω to V +/2
135075I OUT
Output Current
Sourcing, V OUT  = V +/2V IN  (diff) = 100 mV 282245 mA Sinking, V OUT  = V +/2V IN  (diff) = −100 mV
252048 I S
Supply Current
V CM  = 2.5V    4.2  5.67.0mA
V CM  = 0.5V
4.8  6.48.0SR Slew Rate A V  = +1, C L  = 10 pF, R L  = 10 k Ω to V +/2V OUT  = 2 V PP
2.4 V/μs GBW Gain Bandwidth C L  = 20 pF, R L  = 10 k Ω to V +/2 22 MHz G M Gain Margin C L  = 20 pF, R L  = 10 k Ω to V +/2 14 dB ΦM Phase Margin
C L  = 20 pF, R L  = 10 k Ω to V +/2 62 deg THD+N Total Harmonic Distortion + Noise A V  = 1, f O  =
1 kHz, Amplitude = 1V  0.002 %R IN Input Resistance
Differential Mode  38 k ΩCommon Mode  151 M Ωe n
Input Referred Voltage Noise Density    f = 1 kHz, V CM  = 2.5V    2.9 nV/f = 1 kHz, V CM  = 0.5V    2.9 Input Voltage Noise
0.1 Hz to 10 Hz  75 nV PP i n
Input Referred Current Noise Density
f = 1 kHz, V CM  = 2.5V    1.1 pA/
f = 1 kHz, V CM  = 0.5V
2.1
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5V Electrical Characteristics
(Note 4)
Unless otherwise specified, all limits are guaranteed for T A  = 25°C, V + = 5V, V − = 0V, V CM  = V +/2, R L  > 10 k Ω to V +/2. Boldface limits apply at the temperature extremes.
Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)
Units
V OS
Input Offset Voltage (Note 7)
V CM  = 4.5V  ±6±50±150μV
V CM  = 0.5V
±6±40±125TCV OS Input Offset Voltage Temperature Drift V CM  = 4.5V
±0.5±1.3μV/°C V CM  = 0.5V
±0.2±0.8 Input Offset Voltage Time Drift V CM  = 0.5V and V CM  = 4.5V  0.35 μV/month
I B
Input Bias Current
V CM  = 4.5V  ±1.5±30±50nA
V CM  = 0.5V
±14±50±85I OS
Input Offset Current
V CM  = 4.5V  ±1±50±70nA
V CM  = 0.5V
±11±65±80TCI OS Input Offset Current Drift V CM  = 0.5V and V CM  = 4.5V  0.0482 nA/°C
CMRR
Common Mode Rejection Ratio
0.15V ≤ V CM  ≤ 0.7V 0.23V ≤ V CM  ≤ 0.7V 10189120 dB
1.5V ≤ V CM  ≤ 4.85V 1.5V ≤ V CM  ≤ 4.77V
10599130 PSRR
Power Supply Rejection Ratio
2.5V ≤ V + ≤ 5V 111105129
dB
1.8V ≤ V + ≤ 5.5V
117 CMVR Common Mode Voltage Range Large Signal CMRR ≥ 80 dB 0 5V
A VOL
Open Loop Voltage Gain
R L  = 10 k Ω to V +/2V OUT  = 0.5V to 4.5V 112104130 dB R L  = 2 k Ω to V +/2V OUT  = 0.5V to 4.5V
11094119 V OUT
margin rate
Output Voltage Swing High
R L  = 10 k Ω to V +/2 85075mV from either rail R L  = 2 k Ω to V +/2
245075Output Voltage Swing Low
R L  = 10 k Ω to V +/2 95075R L  = 2 k Ω to V +/2
235075I OUT
Output Current
Sourcing, V OUT  = V +/2V IN  (diff) = 100 mV 332747 mA Sinking, V OUT  = V +/2V IN  (diff) = −100 mV
302549 I S
Supply Current
V CM  = 4.5V    4.4  6.07.4mA
V CM  = 0.5V
5.0
6.88.4SR Slew Rate A V  = +1, C L  = 10 pF, R L  = 10 k Ω to V +/2V OUT  = 2 V PP
2.4 V/μs GBW
Gain Bandwidth
C L  = 20 pF, R L  = 10 k Ω to V +/2
22
MHz
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LMP7732
Symbol Parameter
Conditions
Min (Note 6)Typ (Note 5)Max (Note 6)Units G M Gain Margin C L  = 20 pF, R L  = 10 k Ω to V +/2 12 dB ΦM Phase Margin C L  = 20 pF, R L  = 10 k Ω to V +/2 65 deg R IN
Input Resistance
Differential Mode  38 k ΩCommon Mode
151 M ΩTHD+ N Total Harmonic Distortion + Noise A V  = 1, f O  = 1 kHz, Amplitude = 1V  0.001 %e n
Input Referred Voltage Noise Density    f = 1 kHz, V CM  = 4.5V    2.9 nV/f = 1 kHz, V CM  = 0.5V    2.9 Input Voltage Noise
0.1 Hz to 10 Hz  75 nV PP i n
Input Referred Current Noise Density
f = 1 kHz, V CM  = 4.5V    1.1 pA/
f = 1 kHz, V CM  = 0.5V
2.2
Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables.
Note 2:Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3:The maximum power dissipation is a function of T J(MAX), θJA , and T A . The maximum allowable power dissipation at any ambient temperature is P D  = (T J(MAX) - T A )/ θJ A . All numbers apply for packages soldered directly onto a PC board.
Note 4:Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T J  = T A . No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T J  >T A . Absolute maximum Ratings indicate junction temperature limits beyond which the device maybe permanently degraded, either mechanically or electrically.Note 5:Typical val
ues represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.Note 6:All limits are guaranteed by testing, statistical analysis or design.Note 7:Ambient production test is performed at 25°C with a variance of ±3°C.
Connection Diagram
8-Pin SOIC/MSOP
30015003
Top View
Ordering Information
Package Part Number Package Marking Transport Media NSC Drawing
8-Pin SOIC
LMP7732MA LMP7732MA
95 units/Rails M08A
LMP7732MAX    2.5k Units Tape and Reel 8-Pin MSOP
LMP7732MM
AZ3A 1k Units Tape and Reel MUA08A LMP7732MME 250 Units Tape and Reel LMP7732MMX
3.5k Units Tape and Reel
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L M P 7732

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