专利名称：SELECTIVE DEPOSITION OF TUNGSTEN
发明人：Alexey Y. Kovalgin,Mengdi Yang,Antonius A.I.
Aarnink,Rob A.M. Wolters
申请号：US15615489
申请日：20170606
公开号：US20180025939A1
公开日：
20180125
专利内容由知识产权出版社提供
专利附图：
摘要：A method for selectively depositing a metal film onto a substrate is disclosed.In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metaldeposition
precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.
申请人：ASM IP Holding B.V.
地址：Almere NL
国籍：NL
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