deposition专利名称：Method of making a single-deposition-layer-
metal dynamic random access memory
发明人：Stephen L. Casper,Timothy J. Allen,D. Mark
Durcan,Brian M. Shirley,Howard E. Rhodes
申请号：US08852909
申请日：19970508
公开号：US06569727B1
公开日：
20030527
专利内容由知识产权出版社提供
专利附图：
摘要：A 16 megabit (2) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within
an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Schwegman, Lundberg, Woessner & Kluth, P.A.
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