专利名称：Dielectric deposition 发明人：Yu, Chen-Hua Douglas 申请号：EP92306131.1
申请日：19920702
公开号：EP0522799A2
公开日：
19930113
专利内容由知识产权出版社提供
摘要：A method for forming a thin high quality interlevel dielectric (i.e., 19) is disclosed. The dielectric (i.e., 19) is produced in a plasma reactor utilizing a precursor gas such as TEOS. Pressure, power, temperature, gas flow, and showerhead spacing are controlled so that a dielectric of TEOS may be deposited at 60-5 Å/sec., thus making formation of thin (800 Å) high quality dielectrics feasible.
申请人：AT&T Corp.
地址：32 Avenue of the Americas New York, NY 10013-2412 USdeposition
国籍：US
代理机构：Johnston, Kenneth Graham
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