专利名称：Atomic layer deposition methods and
atomic layer deposition tools
deposition
发明人：Gurtej S. Sandhu,Trung Tri Doan
申请号：US11170809
申请日：20050630
公开号：US07279041B2
公开日：
20071009
专利内容由知识产权出版社提供
专利附图：
摘要：An atomic layer deposition method includes positioning a plurality of
semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within
the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.
申请人：Gurtej S. Sandhu,Trung Tri Doan
地址：Boise ID US,Boise ID US
国籍：US,US
代理机构：Wells St. John P.S.
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