专利名称：Plasma enhanced chemical vapor deposition
methods and semiconductor processing
methods of forming layers and shallow
trench isolation regions
发明人：Sujit Sharan,Gurtej S. Sandhu
申请号：US10620426
申请日：20030717
公开号：US20050079731A1
公开日：
20050414
deposition专利内容由知识产权出版社提供
专利附图：
摘要：In accordance with an aspect of the invention, a substrate is placed within a
plasma enhanced chemical vapor deposition reactor. A plurality of reactant gases are provided within the reactor proximate the substrate under high density plasma conditions effective to form a layer on the substrate. The conditions result in etching portions of the layer during its formation and thereby include a deposition to etch ratio of forming the layer. During the forming, the conditions are changed to change the deposition to etch ratio. In another aspect of the invention, the invention includes a semiconductor processing method of forming shallow trench isolation regions within a semiconductive substrate. Isolation trenches are formed within the semiconductive substrate. The substrate is provided within a plasma enhanced chemical vapor deposition reactor. A silane containing gas, an oxygen containing gas and an inert gas are injected into the reactor under high density plasma conditions effective to form a predominate SiOcomprising layer on the substrate to overfill the trenches. The conditions result in etching of portions of the layer during its formation and thereby includes a deposition to etch ratio of the forming SiOcomprising layer. During the forming, the conditions are changed to change the deposition to etch ratio.
申请人：Sujit Sharan,Gurtej S. Sandhu
地址：Boise ID US,Boise ID US
国籍：US,US
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