专利名称：SELECTIVE ILD DEPOSITION FOR FULLY
ALIGNED VIA WITH AIRGAP
发明人：Christopher J. Penny,Benjamin D. Briggs,Huai
Huang,Lawrence A. Clevenger,Michael
Rizzolo,Hosadurga Shobha
申请号：US16406115deposition
申请日：20190508
公开号：US20190267278A1
公开日：
20190829
专利内容由知识产权出版社提供
专利附图：
摘要：A method is presented forming a fully-aligned via (FAV) and airgaps within a
semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
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