专利名称：ALD metal oxide deposition process using
direct oxidation
发明人：Craig R. Metzner,Shreyas S. Kher,Vidyut
Gopal,Shixue Han,Shankarram A. Athreya
申请号：US11421293
申请日：20060531
公开号：US07569501B2
公开日：
20090804
专利内容由知识产权出版社提供
专利附图：
摘要：Embodiments of the invention provide methods for forming hafnium materials,such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors
and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
deposition
申请人：Craig R. Metzner,Shreyas S. Kher,Vidyut Gopal,Shixue Han,Shankarram A. Athreya
地址：Fremont CA US,Campbell CA US,Santa Clara CA US,Milpitas CA US,San Jose CA US
国籍：US,US,US,US,US
代理机构：Patterson & Sheridan, LLP
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