LM5106
100V Half Bridge Gate Driver with Programmable Dead-Time
General Description
The LM5106is a high voltage gate driver designed to drive both the high side and low side N-Channel MOSFETs in a synchronous buck or half bridge configuration.The floating high side driver is capable of working with rail voltages up to 100V.The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits.The robust level shift technology operates at high speed while consuming low power and provides clean output transitions.Under-voltage lockout disables the gate
driver when either the low side or the bootstrapped high side supply voltage is below the operating threshold.The LM5106is offered in the MSOP-10or thermally enhanced 10-pin LLP plastic package.
Features
n Drives both a high side and low side N-channel MOSFET
n    1.8A peak output sink current
n    1.2A peak output source current
n Bootstrap supply voltage range up to 118V DC n Single TTL compatible Input
n Programmable turn-on delays (Dead-time)n Enable Input pin
n Fast turn-off propagation delays (32ns typical)n Drives 1000pF with 15ns rise and 10ns fall time n Supply rail under-voltage lockout n
Low power consumption
Typical Applications
n Solid State motor drives
n Half and Full Bridge power converters n Two switch forward power converters
Packagebootstrapped
n LLP-10(4mm x 4mm)n MSOP-10
Simplified Block Diagram
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FIGURE 1.
January 2006
LM5106100V Half Bridge Gate Driver with Programmable Dead-Time
©2006National Semiconductor Corporation DS201759www.national
Connection Diagram
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10-Lead MSOP or LLP
See NS Number MUB10A,SDC10A
Ordering Information
Ordering Number Package Type NSC Package Drawing
Supplied As
LM5106MM MSOP-10MUB10A 1000shipped as Tape &Reel LM5106MMX MSOP-10MUB10A 3500shipped as Tape &Reel LM5106SD LLP-10SDC10A 1000shipped as Tape &Reel LM5106SDX
LLP-10
SDC10A
4500shipped as Tape &Reel
Pin Descriptions
Pin Name Description
Application Information
1VDD Positive gate drive supply Decouple VDD to VSS using a low ESR/ESL capacitor,placed as close to the IC as possible.
2
HB
High side gate driver bootstrap rail Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal to HS.The Bootstrap capacitor should be placed as close to IC as possible.
3HO High side gate driver output
Connect to the gate of high side N-MOS device through a short,low inductance path.
4HS High side MOSFET source connection Connect to the negative terminal of the bootststrap capacitor and to the source of the high side N-MOS device.
5NC Not Connected
6
RDT
Dead-time programming pin
A resistor from RDT to VSS programs the turn-on delay of both the high and low side MOSFETs.The resistor should be placed close to the IC to minimize noise coupling from adjacent PC board traces.7EN Logic input for driver Disable/Enable
TTL compatible threshold with hysteresis.LO and HO are held in the low state when EN is low.
8IN Logic input for gate driver TTL compatible threshold with hysteresis.The high side MOSFET is turned on and the low side MOSFET turned off when IN is high.9VSS Ground return
All signals are referenced to this ground.
10LO Low side gate driver output Connect to the gate of the low side N-MOS device with a short,low inductance path.
NA
EP
Exposed Pad
The exposed pad has no electrical contact.Connect to system ground plane for reduced thermal resistance.
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Absolute Maximum Ratings(Note1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
V DD to V SS–0.3V to+18V
HB to HS–0.3V to+18V
IN and EN to V SS–0.3V to V DD+0.3V
LO to V SS–0.3V to V DD+0.3V
HO to V SS HS–0.3V to HB+0.3V
HS to V SS(Note6)−5V to+100V
HB to V SS118V
RDT to V SS–0.3V to5V
Junction Temperature+150˚C
Storage Temperature Range–55˚C to+150˚C ESD Rating HBM
(Note2)
1.5kV
Recommended Operating Conditions
V DD+8V to+14V HS(Note6)–1V to100V HB HS+8V to HS+14V HS Slew Rate<50V/ns Junction Temperature–40˚C to+125˚C
Electrical Characteristics Specifications in standard typeface are for T
J
=+25˚C,and those in boldface
type apply over the full operating junction temperature range.Unless otherwise specified,V DD=HB=12V,V SS=HS=
0V,EN=5V.No load on LO or HO.RDT=100kΩ(Note4).
Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS
I DD V DD Quiescent Current IN=EN=0V0.340.6mA
I DDO V DD Operating Current f=500kHz  2.1  3.5mA
I HB Total HB Quiescent Current IN=EN=0V0.060.2mA
I HBO Total HB Operating Current f=500kHz  1.53mA
I HBS HB to V SS Current,Quiescent HS=HB=100V0.110µA
I HBSO HB to V SS Current,Operating f=500kHz0.5mA
INPUT IN and EN
V IL Low Level Input Voltage Threshold0.8  1.8V
V IH High Level Input Voltage Threshold  1.8  2.2V
R pd Input Pulldown Resistance Pin IN and EN100200500kΩ
DEAD-TIME CONTROLS
VRDT Nominal Voltage at RDT  2.73  3.3V
IRDT RDT Pin Current Limit RDT=0V0.75  1.5  2.25mA UNDER VOLTAGE PROTECTION
V DDR V DD Rising Threshold  6.2  6.97.6V
V DDH V DD Threshold Hysteresis0.5V
V HBR HB Rising Threshold  5.9  6.67.3V
V HBH HB Threshold Hysteresis0.4V
LO GATE DRIVER
V OLL Low-Level Output Voltage I LO=100mA0.210.4V
V OHL High-Level Output Voltage I LO=–100mA,
V OHL=V DD–V LO
0.50.85V
I OHL Peak Pullup Current LO=0V  1.2A
I OLL Peak Pulldown Current LO=12V  1.8A
HO GATE DRIVER
V OLH Low-Level Output Voltage I HO=100mA0.210.4V
V OHH High-Level Output Voltage I HO=–100mA,
V OHH=HB–HO
0.50.85V
I OHH Peak Pullup Current HO=0V  1.2A
I OLH Peak Pulldown Current HO=12V  1.8A THERMAL RESISTANCE
θJA Junction to Ambient(Note3),(Note5)40˚C/W
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Switching Characteristics
Specifications in standard typeface are for T J =+25˚C,and those in boldface
type apply over the full operating junction temperature range .Unless otherwise specified,V DD =HB =12V,V SS =HS =0V,No Load on LO or HO (Note 4).Symbol Parameter
Conditions
Min
Typ Max Units t LPHL Lower Turn-Off Propagation Delay 3256ns t HPHL Upper Turn-Off Propagation Delay 3256ns t LPLH Lower Turn-On Propagation Delay RDT =100k 400520640ns t HPLH Upper Turn-On Propagation Delay RDT =100k 450570690ns t LPLH Lower Turn-On Propagation Delay RDT =10k 85115160ns t HPLH Upper Turn-On Propagation Delay RDT =10k
85
115160
ns t en ,t sd Enable and Shutdown propagation delay 36ns DT1,DT2Dead-time LO OFF to HO ON &HO OFF to LO ON
RDT =100k 510µs RDT =10k 86ns MDT Dead-time matching RDT =100k 50ns t R Either Output Rise Time C L =1000pF 15ns t F
Either Output Fall Time
C L =1000pF 10
ns
Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the component may occur.Operating Ratings are conditions under which operation of the device is guaranteed.Operating Ratings do not imply guaranteed performance limits.For guaranteed performance limits and associated test conditions,see the Electrical Characteristics tables.
Note 2:The human body model is a 100pF capacitor discharged through a 1.5k Ωresistor into each pin.Pin 2,Pin 3and Pin 4are rated at 500V.
Note 3:4layer board with Cu finished thickness 1.5/1.0/1.0/1.5oz.Maximum die size used.5x body length of Cu trace on PCB top.50x 50mm ground and power planes embedded in PCB.See Application Note AN-1187.
Note 4:Min and Max limits are 100%production tested at 25˚C.Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC)methods.Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 5:The θJA is not a constant for the package and depends on the printed circuit board design and the operating conditions.
Note 6:In the application the HS node is clamped by the body diode of the external lower N-MOSFET,therefore the HS voltage will generally not exceed -1V.However in some applications,board resistance and inductance may result in the HS node exceeding this stated voltage transiently.
If negative transients occur on HS,the HS voltage must never be more negative than V DD -15V.For example,if V DD =10V,the negative transients at HS must not exceed -5V.
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Typical Performance Characteristics
V DD Operating Current vs Frequency Operating Current vs Temperature
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20175911 Quiescent Current vs Supply Voltage Quiescent Current vs Temperature
2017591220175913 HB Operating Current vs Frequency HO&LO Peak Output Current vs Output Voltage
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Typical Performance Characteristics
(Continued)
Undervoltage Rising Threshold vs Temperature
Undervoltage Hysteresis vs Temperature
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LO &HO -Low Level Output Voltage vs Temperature LO &HO -High Level Output Voltage vs Temperature
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Input Threshold vs Temperature Dead-Time vs RT Resistor Value
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