1- and 2-Axis Magnetic Sensors HMC1001/1002/1021/1022
The Honeywell HMC100x and HMC102x magnetic sensors are one and two-axis surface mount sensors designed for low field magnetic sensing. By adding supporting signal processing, cost effective magnetometers or compassing solutions are enabled. Th ese small, low cost solutions are easy to assemble for high volume OEM designs. Applications for the HMC100x and HMC102x sensors
include Compassing,
Navigation Systems, Magnetometry, and Current
Sensing.
The HMC100x and HMC102x sensors utilize Honeywell’s Anisotropic Magnetoresistive (AMR) technology that provides advantages over coil based magnetic sensors. They are extremely sensitive, low field, solid-state magnetic sensors designed to measure direction and magnitude of Earth’s magnetic fields, from tens of micro-gauss to 6 gauss. Honeywell’s Magnetic Sensors are among the most sensitive and reliable low-field sensors in the industry.
Honeywell continues to maintain product excellence and performance by introducing innovative solid-state magnetic sensor solutions. These are highly reliable, top performance products that are delivered when promised. Honeywell’s magnetic sensor solutions provide real solutions you can count on.
FEATURES BENEFITS
4
Surface Mount 1 and 2-Axis Sensors
4Easy to Assemble & Compatible with High Speed SMT Assembly
4Low Cost
4Designed for High Volume, Cost Effective OEM Designs
44-Element Wheatstone Bridges
4Low Noise Passive Element Design
4Low Voltage Operations (2.0V)
4Compatible for Battery Powered Applications
4Available in Tape & Reel Packaging
4High Volume OEM Assembly
4Patented Offset and Set/Reset Straps
4Stray Magnetic Field Compensation
4
Wide Field Range (up to +/-6 Oe)
4Sensor Can Be Used in Strong Magnetic Field Environments
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HMC1001/1002 SPECIFICATIONS
Characteristics Conditions*
Min Typ Max Units Bridge Elements
Supply Vbridge (Vb) referenced to GND
- 5.0 12 Volts Resistance
Bridge current = 10mA
per bridge
600 850 1200 ohms Operating Temperature Ambient -55 150 °C Storage Temperature Ambient, unbiased
-55 175 °C Field Range Full scale (FS) – total applied field
-2 +2 gauss Linearity Error
Best fit straight line
± 1 gauss ± 2 gauss
0.1 1.0 0.5 2.0 %FS Hysteresis Error 3 sweeps across ±2 gauss 0.05 0.10 %FS Repeatability Error 3 sweeps across ±2 gauss
0.05 0.10 %FS S/R Repeatability
Output variation after alternate S/R pulses
Vb = 5V, I SR = 3A
100 µV Bridge Offset Offset = (OUT+) – (OUT-)
Field = 0 gauss after Set pulse, Vb = 8V
-60 -15 +30 mV Sensitivity Set/Reset Current = 3A
2.5
3.2
4.0 mV/V/gauss Noise Density @ 1Hz, Vb=5V 29 nV/sqrt Hz Resolution 10Hz Bandwidth, Vb=5V 27 µgauss Bandwidth Magnetic signal (lower limit = DC) 5 MHz Disturbing Field Sensitivity starts to degrade. Use S/R pulse to restore sensitivity. 5 gauss Sensitivity Tempco T A = -40 to 125°C, Vb=8V T A = -40 to 125°C, Ibridge=5mA -0.32 -0.30 -0.06 -0.28 %/°C Bridge Offset Tempco T A = -40 to 125°C, No Set/Reset T A = -40 to 125°C, With Set/Reset
±0.03 ±0.001 %/°C Bridge Ohmic Tempco T A = -40 to 125°C
0.25 %/°C Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss
With set/reset
±3 ±0.5
%FS
Max. Exposed Field No perming effect on zero reading
degrade10000 gauss Set/Reset Straps
Resistance Measured from S/R+ to S/R-
1.5 1.8 ohms Current
0.1% duty cycle, or less, 2µsec current pulse
2.0
3.0 5 Amp Resistance Tempco T A = -40 to 125°C
0.37 %/°C Offset Straps
Resistance Measured from OFF+ to OFF- 2.5 3.5 ohms Offset Constant
DC Current
Field applied in sensitive direction 46 51 56 mA/gauss Resistance Tempco T A = -40 to 125°C 0.39
%/°C
* Tested at 25°C except stated otherwise.
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HMC1021/1022 SPECIFICATIONS
Characteristics Conditions*
Min Typ Max Units Bridge Elements
Supply Vbridge (Vb) referenced to GND
2 5.0 25 Volts Resistance
Bridge current = 10mA
per bridge
800 1100 1300 ohms Operating Temperature Ambient -55 150 °C Storage Temperature Ambient, unbiased
-55 175 °C Field Range Full scale (FS) – total applied field
-6 +6 gauss Linearity Error
Best fit straight line
± 1 gauss ± 3 gauss ± 6 gauss
0.05 0.4 1.6
%FS
Hysteresis Error 3 sweeps across ±2 gauss 0.08 %FS Repeatability Error 3 sweeps across ±2 gauss
0.08 %FS Bridge Offset Offset = (OUT+) – (OUT-)
Field = 0 gauss after Set pulse, Vb = 5V
-10 ±2.5 +11.25 mV Sensitivity Set/Reset Current = 0.5A
0.8 1.0 1.25 mV/V/gauss Noise Density @ 1Hz, Vb=5V 48 nV/sqrt Hz Resolution 10Hz Bandwidth, Vb=5V 85 µgauss Bandwidth Magnetic signal (lower limit = DC) 5 MHz Disturbing Field Sensitivity starts to degrade. Use S/R pulse to restore sensitivity. 20 gauss Sensitivity Tempco T A = -40 to 125°C, Vb=5V T A = -40 to 125°C, Ibridge=5mA -0.32 -0.30 -0.06 -0.28 %/°C Bridge Offset Tempco T A = -40 to 125°C, No Set/Reset T A = -40 to 125°C, With Set/Reset
±0.05 ±0.001 %/°C Bridge Ohmic Tempco T A = -40 to 125°C
0.25 %/°C Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss
+0.3 %FS Max. Exposed Field No perming effect on zero reading
10000 gauss Set/Reset Straps
Resistance Measured from S/R+ to S/R-
5.5 7.7 9 ohms Current
0.1% duty cycle, or less, 2µsec current pulse
0.5 0.5 4.0 Amp Resistance Tempco T A = -40 to 125°C
0.37 %/°C Offset Straps
Resistance Measured from OFF+ to OFF- 38 50 60 ohms Offset Constant
DC Current
Field applied in sensitive direction
4.0 4.6 6.0 mA/gauss Resistance Tempco T A = -40 to 125°C
0.39
%/°C
* Tested at 25°C except stated otherwise.
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KEY PERFORMANCE DATA
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PACKAGE / PINOUT SPECIFICATIONS
Arrow indicates direction of applied field that generates a positive output voltage after a SET pulse.
BASIC DEVICE OPERATION
The Honeywell HMC100x and HMC102x Anisotropic Magneto-Resistive (AMR) sensors are simple resistive Wheatstone bridges to measure magnetic fields and only require a supply voltage for the measurement. With power supply applied to the bridges, the sensors convert any incident magnetic field in the sensitive axis directions to a differential voltage outputs. In addition to the bridge circuits, each sensor has two on-chip magnetically coupled straps; the offset strap and the set/reset strap. These straps are Honeywell patented features for incident field adjustment and magnetic domain alignment; and eliminate the need for external coils positioned around the sensors.
The magnetoresistive sensors are made of a nickel-iron (Permalloy) thin-film deposited on a silicon wafer and patterned as a resistive strip element. In the presence of a magnetic field, a change in the
bridge resistive elements causes a corresponding change in voltage across the bridge outputs.
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