JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD                                                    TO-92 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
FEATURES
z  Complementary to S9012 z  Excellent h FE linearity
MAXIMUM RATINGS  (T a =25℃ unless otherwise noted)
5 V
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol  Test  conditions
M in
T yp    Max    Unit
Collector-base breakdown voltage V (BR)CBO
I C = 100μA , I E 0 40  V
Collector-emitter breakdown voltage V (BR)CEO  I C = 1mA , I B =
0 25  V Emitter-base breakdown voltage V (BR)EBOs parameter
I E = 100μA , I C =0 5  V Collector cut-off current I CBO  V CB = 40V , I E =0  0.1 μA  Collector cut-off current I CEO  V CE =20V , I E =0  0.1 μA  Emitter cut-off current
I EBO  V EB = 5V, I C =
0  0.1 μA  h FE(1)
V CE =1V, I C =
50mA 64  400  DC current gain
h FE(2)
V CE =1V, I C = 500mA 40    Collector-emitter saturation voltage V CE(sat) I C = 500mA, I B = 50mA  0.6 V Base-emitter voltage V BE(sat) I C = 500mA, I B = 50mA
1.2
V
Transition frequency
f T
V CE =6V,I C =20mA,f=30MHz
150  MHz
CLASSIFICATION OF h FE(1)
Rank    D E F G H I J Range
64-91 78-112 96-135 112-166 144-202 190-300 300-400
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
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【南京南山半导体有限公司 — 长电三极管选型资料】
020
40
60
80
100
10100
10
25
50
75
100
125
150
0.1
1
10
100
C O L L E C T O R  C U R R E N T    I C    (m A )
Static Characteristic h    ——
I  30
300
C O L L E C T O R -E M I T T E R  S A T U R A T I O N
V O L T A G E    V C E s a t    (m V )
50030
3
REVERSE VOLTAGE    V    (V)
C A P A C I T A N C E    C    (p F )
S9013
Typical Characterisitics
AMBIENT TEMPERATURE    T a    ()
℃30
3
0.3
C O L L E C T O R  C U R R E N T    I C    (m A )
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】

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