A,Jun,2012
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT1616  TRANSISTOR (NPN) FEATURES
z  Audio frequency power amplifier z  Medium speed switching
MARKING:16·
MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)          Parameter
Symbol Test  conditions Min Typ Max Unit Collector-base breakdown voltage
V (BR)CBO I C =10µA, I E =0 60  V Collector-emitter breakdown voltage
V (BR)CEO I C =2mA, I B =0 50  V Emitter-base breakdown voltage
V (BR)EBO I E =10µA, I C =0 6  V Collector cut-off current
I CBO  V CB = 60V, I E =0  100 nA Emitter cut-off current
I EBO  V EB =6V, I C =0  100 nA h FE(1) V CE =2V, I C =100mA 135  600  DC current gain
h FE(2) V CE =2V, I C =1A 81    Collector-emitter saturation voltage
V CE(sat) I C =1A, I B =50mA  0.3 V Collector-emitter saturation voltage
V BE(sat) I C =1A, I B =50mA      1.2 V Base-emitter voltage
V BE  V CE =2V, I C =50mA 0.6  0.7 V Transition frequency
f T  V CE =2V,I C =100mA, f=100MHz 100  MHz Collector output capacitance C ob  V CB =10V, I E =0, f=1MHz  19 pF CLASSIFICATION OF h FE(1)
RANK Y G L RANGE 135~270 200~400 300~600
Symbol Parameter Value Unit V CBO
Collector-Base Voltage 60 V V CEO
Collector-Emitter Voltage 50 V V EBO
Emitter-Base Voltage    6 V I C
Collector Current    1    A P C
Collector Power Dissipation 750 mW R ΘJA
Thermal Resistance From Junction To Ambient 167 ℃/W T j
Junction Temperature 150 ℃ T stg  Storage Temperature -55～+150℃    www.nscn 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
parameter是什么意思啊

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