1.Product profile
1.1General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
1.2Features and benefits
⏹Suitable for logic level gate drive sources ⏹Very fast switching
⏹Surface-mounted package ⏹Trench MOSFET technology
1.3Applications
⏹Logic level translators
⏹High-speed line drivers
1.4Quick reference data
2.Pinning information
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
Table 1.Quick reference data
Symbol Parameter
Conditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C
--60V I D drain current
V GS =10V; T sp =25°C;see Figure 1; see Figure 3
--300mA P tot total power dissipation T sp =25°C;see Figure 2
--0.83
W Static characteristics
R DSon
drain-source on-state resistance
V GS =10V; I D =500mA; T j =25°C; see Figure 6; see Figure 8
-  2.8
5
Ω
Table 2.Pinning information Pin Symbol Description Simplified outline
Graphic symbol
1G gate SOT23 (TO-236AB)
2S source 3
D
drain
1
2
3
3.Ordering information
4.Marking
[1]
% = placeholder for manufacturing site code
5.Limiting values
Table 3.
Ordering information
Type number
Package Name
Description
Version 2N7002
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
Table 4.Marking codes
Type number
Marking code [1]2N7002
12%
Table 5.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤150°C
-60V V DGR drain-gate voltage 25°C ≤T j ≤150°C; R GS =20k Ω
-60V V GS gate-source voltage -3030V V GSM peak gate-source voltage pulsed; t p ≤50µs; δ=0.25
-4040V I D
drain current
V GS =10V; T sp =25°C;see Figure 1; see Figure 3
-300mA V GS =10V; T sp =100°C; see Figure 1
-190mA I DM peak drain current pulsed; t p ≤10µs; T sp =25°C;see Figure 3
-  1.2A P tot total power dissipation T sp =25°C;see Figure 2-0.83W T j junction temperature -65150°C T stg storage temperature -65150°C Source-drain diode
I S source current T sp =25°C
-300mA I SM
peak source current
pulsed; t p ≤10µs; T sp =25°C -  1.2
A
6.Thermal characteristics
Table 6.Thermal characteristics
Symbol Parameter Conditions
Min Typ Max Unit R th(j-a)
thermal resistance from junction to ambient
Mounted on a printed-circuit board; minimum footprint ; vertical in still air
--350
K/W
R th(j-sp)
thermal resistance from junction to solder point
see Figure 4--150K/W
7.Characteristics
Table 7.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source
breakdown voltage I D=10µA; V GS=0V; T j=25°C60--V I D=10µA; V GS=0V; T j=-55°C55--V
V GSth gate-source threshold
voltage I D=0.25mA;V DS=V GS; T j=25°C;
see Figure 9; see Figure 10
12  2.5V
I D=0.25mA;V DS=V GS; T j=150°C;
see Figure 9; see Figure 10
0.6--V
I D=0.25mA;V DS=V GS; T j=-55°C;
see Figure 9; see Figure 10
--  2.75V
I DSS drain leakage current V DS=48V;V GS=0V; T j=25°C-0.011µA
V DS=48V;V GS=0V; T j=150°C--10µA I GSS gate leakage current V GS=15V; V DS=0V; T j=25°C-10100nA
V GS=-15V;V DS=0V; T j=25°C-10100nA
R DSon drain-source on-state
resistance V GS=10V; I D=500mA; T j=25°C;
see Figure 6; see Figure 8
-  2.85Ω
V GS=10V; I D=500mA; T j=150°C;
see Figure 6; see Figure 8
--9.25Ω
V GS=4.5V;I D=75mA;T j=25°C;see
Figure 6; see Figure 8
-  3.8  5.3Ω
Dynamic characteristics
C iss input capacitance V DS=10V;f=1MHz;V GS=0V;
T j=25°C -3150pF
C oss output capacitance-  6.830pF C rss reverse transfer
capacitance
-  3.510pF
t on turn-on time V GS=10V; V DS=50V;R L=250Ω;
R G(ext)=50Ω; R GS=50Ω-  2.510ns
t off turn-off time-1115ns Source-drain diode
V SD source-drain voltage I S=300mA;V GS=0V;T j=25°C;see
Figure 11
-0.85  1.5V
Q r recovered charge V GS=0V;I S=300mA;
dI S/dt=-100A/µs -30-nCprofile中文
t rr reverse recovery time-30-ns

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