专利名称：CHEMICAL VAPOR DEPOSION SYSTEM 发明人：TSUTAHARA KOUICHIROU,YAMAGUCHI TORU
申请号：JP33746390
申请日：19901130
公开号：JPH04206823A
公开日：
19920728
专利内容由知识产权出版社提供
摘要：PURPOSE:To obtain a CVD system which requires little space and can supply stably a plurality of kinds of reaction material at a low cost, by installing a liquid mass flow controller measuring a plurality of kinds of alcoholate based liquid reaction material mutually independently in liquid phase, and a vaporization chamber which makes the reaction material collectively flow, and vaporizes it en bloc. CONSTITUTION:In the CVD system forming a thin film crystal, liquid TEOS in a tank 2a is sent with pressure to a liquid mass flow controller 3a by N2 gas pressure. Said controller 3a accurately measures the mass flow rate of the liquid TEOS by using a phenomenon that heat is taken away in accordance with the mass flow rate, and supplies the liquid TEOS. In the similar manner, liquid TMP in a tank 2b is sent with pressure to a liquid mass flow controller 3b by N2 gas pressure. The mass flow rate is accurately measured, and the liquid TMP is supplied. The liquid TEOS and the liquid TMP, which have been accurately measured and supplied, are mixed, heated at a constant temperature by a carburetor 4, mixed with carrier N2, and turned into N2 gas which contains sufficiently vaporized TEOS and TMP. Hence one carburetor is necessary to stably supply a plurality of kinds of reaction material.
申请人：MITSUBISHI ELECTRIC CORP
reaction mass
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