专利名称：DIFFUSION FURNACE 发明人：DAIMON TADASHI
申请号：JP32512689
申请日：19891214
公开号：JPH03185719A
公开日：
19910813
专利内容由知识产权出版社提供
摘要：PURPOSE:To prevent entry of oxygen into a reaction quartz tube and enable a stable semiconductor wafer processing wherein the wafer is not subjected to high temperature oxygen when it goes in and out of a furnace by placing at the reaction quartz tube and its port to the furnace a separate additional quartz tube with the same shape. CONSTITUTION:A cylindrical additional quartz tube 11 in contact with an inlet of a cylindrical reaction quartz tube 1 having a diameter equal to that of the reaction quartz tube 1 and length of 3 to 5 times the diameter is provided. In this case, the additional quartz tube 11 placed at the inlet of the reaction quartz tube shifts the position of oxygen entry to the right in the figure by its length and a temperature in the oxygen entry part is sufficiently low so that a wafer is not subjected to high temperature oxygen when it goes in and out of a furnace. Thus stable semiconductor wafer processing is possible.
申请人：NEC CORP
reaction diffusion
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