专利名称：DC MAGNETRON TYPE REACTIVE SPUTTERING DEVICE
发明人：SHIROSAKA YOSHIYUKI,TAMURA TAKANORI,NISHIMURA NAOKI
申请号：JP23863789
申请日：19890914reactive to
公开号：JPH03100173A
公开日：
19910425
专利内容由知识产权出版社提供
摘要：PURPOSE:To prevent an abnormal electric discharge and to improve the production efficiency of reactive sputtering by previously coating the non-sputtering region in the upper surface part of a target and the side face part thereof, the surface of a backing plate, etc., with an insulating material of a specific thickness. CONSTITUTION:The target 1 is disposed on the backing plate 5 in a sputtering chamber and further, an earth shield 6 is provided. The sputtering region 2 of this target 1 is subjected to DC magnetron type reactive sputtering, by which the thin film of the composed of the target material and reactive gases is formed. The non-sputtering region 3 of the upper surface part of the target 1, the side face part thereof and the surface of the backing part 5 of the above mentioned device, where the insulating compd. films of the target 1 are liable to be formed, are previously coated with the films 4, 4', 4'' of the insulating material of >=50mu thickness. The abnormal discharge is prevented in this way and the DC magnetron type reactive sputtering of the excellent discharge stability is enabled. In addition, the need for releasing the pressure reduction by interrupting the sputtering in order to remove the insulating compd. films is eliminated and the
productivity is improved.
申请人：MITSUBISHI KASEI CORP 更多信息请下载全文后查看

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