专利名称：FORMATION OF ZINC OXIDE FILM BY
VAPOR PHASE METHOD USING PLASMA 发明人：YAMAZAKI SHIYUNPEI
申请号：JP988481
申请日：19810126
公开号：JPS57123969A
公开日：
19820802
reactive to专利内容由知识产权出版社提供
摘要：PURPOSE:To efficiently form ZnO films by transferring a reactive gas generated by vaporizing Zn or a Zn compound to a reaction region with a carrier gas and by depositing vapor of ZnO produced by reacting the reactive gas under induced energy. CONSTITUTION:Substrates 1 are allowed to stand together on a quartz boat 2 in a reaction furnace 3 in large numbers, and a starting substance 4 such as Zn, ZnO or other Zn compound is put in a boat 5 and heated with an electric furnace 10. A reactive gas generated by vaporization is transferred to the reaction region with a carrier gas 14, 15, 16 introduced into the furnace 3 through flowmeters 17, 18, 19. On the other hand, high frequency energy is applied between electrodes 6, 7 from a generation source 8 to supply induced energy to the reaction region. The reactive gas reacts under the induced energy and deposits on the surfaces of the substrates 1 as ZnO.
申请人：HANDOUTAI ENERUGII KENKYUSHO:KK
更多信息请下载全文后查看

版权声明：本站内容均来自互联网，仅供演示用，请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系QQ:729038198，我们将在24小时内删除。