专利名称：METAL BASE TRANSISTOR 发明人：OGAWA MASAKI
申请号：JP18635381
申请日：19811120
公开号：JPS5887865A
公开日：
reactive metal
19830525
专利内容由知识产权出版社提供
摘要：PURPOSE:To enable to form a single crystal semiconductor layer having excellent characteristics which will be demonstrated on a base metal thin film as well by a method wherein the base metal thin film is formed into a reed screen type or lattice type. CONSTITUTION:A high resistance or p type GaAs semiconductor layer 13 is buried between reed screen type or lattice type metal thin films 12 consisting of tungsten, molybdenum or an alloy of said two elements and titanium or nitrogen. After the semiconductor layer 13 has been uniformly coated on an n type GaAs substrate 11 in the approximate thickness of 1mum by performing a vapor- phase growing method, for example, a mask is formed on the high resistance or p type GaAs layer, excluding the metal base forming region, using photoetching technique, and the reed screen type or the lattice type part is removed, using the above mask, by performing a chemical etching method, an ion-milling method or a reactive ion-milling method, leaving the semiconductor layer 13, and the titled transistor is formed.
申请人：NIPPON DENKI KK
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