专利名称：APPARATUS AND METHOD FOR DRY-ETCHING
发明人：MURAKI AKIRA,SHIMIZU
KUNITAKA,YOSHIDA RISABURO
申请号：JP33595190
申请日：19901130
公开号：JPH04206720A
公开日：
19920728
专利内容由知识产权出版社提供
摘要：PURPOSE:To form a high density and high accuracy etching pattern regardless of the degree of the plasma-resistance of resist which protects an etched film by a method wherein the etched film and an electrode face each other in a low pressure reactive gas atmosphere and a DC voltage is applied to generate a discharge between the etched film and the electrode. CONSTITUTION:The etched film 3a of an etching object 3 are made to face an electrode 8 in a low pressure reactive gas atmosphere and, while a DC voltage is applied to the reactive gas, a discharge is generated between the etched film 3a and the electrode 8. For instance, a reaction chamber 2 is evacuated through an exhaust pipe 12 to maintain a low pressure vacuum state in the reaction chamber 2 first. Then the anode of a DC power supply 11 is connected to the grid (electrode) 8 and, at the same time, the cathode is connected to the metal thin film layer (etched film) 3a of the photomask (etching object) 3 and a voltage of 500 V is applied between the grid 8 and the metal thin film layer 3a. Further, reactive gas containing carbon tetrachloride and oxygen is supplied into an ion reaction pipe part 5 through a gas introducing pipe part 6 and a discharge is generated between the metal thin film
layer 3a and the grid 8 to subject the metal thin film layer 3a to dry-etching.
reactive metal
申请人：TOPPAN PRINTING CO LTD
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