专利名称：FABRICATION OF SEMICONDUCTOR
MATERIALS AND DEVICES WITH
CONTROLLED ELECTRICAL CONDUCTIVITY 发明人：KAPOLNEK, David,THIBEAULT, Brian
申请号：US2001007976
申请日：20010313
公开号：WO01/069659P1
reactive materials studies
公开日：
20010920
专利内容由知识产权出版社提供
摘要：A method for protecting the surface of a semiconductor material (30, 50) from damage and dopant passivation is described. A barrier layer (32, 52) of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor (10) such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer (32, 52) blocks the diffusion of hydrogen into the material. The reactor (10) can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor (10) with little or no passivation of the dopant species. The barrier layer (32, 52) can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer (32, 52) can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
申请人：CREE LIGHTING COMPANY
地址：US
国籍：US
代理机构：HEYBL, Jaye, G.更多信息请下载全文后查看

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