专利名称：Reactive plasma process for etching
chromium films with high chromium oxide
and glass impurity content
发明人：Chen, Lee,Mathad, Gangadhara Swami
申请号：EP84710036
申请日：19841215
公开号：EP0149415A3
公开日：
19850814
专利内容由知识产权出版社提供
摘要：A thick layer of chromium containing CrO/CrO and glass impurities therein is etched in a glow discharge in a low pressure ambient atmosphere of a chlorine-containing gas, oxygen and trace amounts of C and F constituents. In a preferred embodiment the C and F constituents are provided by coating the wall of the etching chamber with Teflon and carbon tetrachloride is the chlorine-containing gas.
reactive ion etching申请人：International Business Machines Corporation
代理人：Kreidler, Eva-Maria, Dr. rer. nat.
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