专利名称：String programmable nonvolatile memory with NOR architecture
发明人：Rolandi, Paolo
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申请号：EP00830209.3
申请日：20000321
公开号：EP1137011B1
公开日：
20081210
专利内容由知识产权出版社提供
摘要：A nonvolatile memory (1) having a NOR architecture has a memory array (2) including a plurality of memory cells (3) arranged in rows and columns in NOR configuration, the memory cells (3) arranged on a same column being connected to one of a plurality of bit lines (11); and a column decoder (6). The column decoder comprises a plurality of selection stages (17), each of which is connected to respective bit lines (11) and receives first bit line addressing signals (YM0, ..., YM7). The selection stages (17) comprise word programming selectors (28) controlled by the first bit line addressing signals (YM0, ..., YM7) and supplying a programming voltage (70) to only one of the bit lines (11) of each selection stage (17). Each selection stage (17) moreover comprises a string programming selection circuit (29, 30) controlled by second bit line addressing signals (S0, ..., S7) thereby simultaneously supplying the programming voltage (70) to a plurality of the bit lines (11) of each selection stage (17).
申请人：ST MICROELECTRONICS SRL
地址：IT
国籍：IT
代理机构：Leinweber & Zimmermann 更多信息请下载全文后查看

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