专利名称：BORDERLESS (ETCHING STOP) LAYER STACK FOR NON-VOLATILE MEMORY
APPLICATIONS
发明人：TAO, Guoqiao
申请号：IB2005054055
申请日：20051205
公开号：WO06/064394P1
公开日：
20060622
专利内容由知识产权出版社提供
摘要：The non- volatile memory device (MC) comprises a floating gate stack (FG, 20, CG) and a contact (60) adjacent to the floating gate stack (FG, 20, CG) and separated therefrom by an interposed separation (40, 50). The floating gate stack (FG, 20, CG) is covered by a borderless capping layer comprising an intermediate silicon dioxide layer (100) and a second silicon nitride capping layer (75); said intermediate silicon dioxide layer being located between the floating gate stack (FG, 20, CG) and the second silicon nitride capping layer (75). The invention discloses a method of manufacturing such a non- volatile memory device (MC).
申请人：TAO, Guoqiao
地址：NL,NL
国籍：NL,NL
代理机构：ELEVELD, Koop, J.
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