2003 Microchip Technology Inc.DS21733D-page 1
M
MCP6001/2/4
Features
•Available in SC-70-5 and SOT-23-5 packages •1MHz Gain Bandwidth Product (typ.)•Rail-to-Rail Input/Output
•Supply Voltage: 1.8V to 5.5V
•Supply Current: I Q  = 100µA (typ.)•90° Phase Margin (typ.)•
T emperature Range:
-Industrial: -40°C to +85°C -Extended: -40°C to +125°C
•Available in Single, Dual and Quad Packages
Applications
•Automotive
•Portable Equipment •Photodiode Pre-amps •Analog Filters
•Notebooks and PDAs
•
Battery-Powered Systems
Available Tools
Spice Macro Models (at www.microchip)FilterLab
® Software (at www.microchip)
Typical Application
Description
The Microchip Technology Inc. MCP6001/2/4 family of operational amplifiers (op amps) is specifically
designed for general-purpose applications. This family has a 1MHz gain bandwidth product and 90° phase margin (typ.). It also maintains 45° phase margin (typ.)with 500pF capacitive load. This family operates from a single supply voltage as low as 1.8V, while drawing 100µA (typ.) quiescent current. Additionally, the MCP6001/2/4 supports rail-to-rail input and output swing, with a common mode input voltage range of V DD +300mV to V SS -300mV. This family of opera-tional amplifiers is designed with Microchip’s advanced CMOS process.
The MCP6001/2/4 family is available in the industrial and extended temperature ranges. It also has a power supply range of 1.8V to 5.5V.
Package Types
R 1
V OUT
R 2
V IN
V DD
+-Gain 1R 1
R 2
-----+=Non-Inverting Amplifier
MCP6001V REF
V SS
MCP6001+
V IN –
V V IN +SC-70-5, SOT-23-5
MCP6002PDIP , SOIC, MSOP
MCP6004
V INA +V INA –V SS 12
3414131211-V OUTA +-+A
D V DD V OUTD
V IND –
V IND +109856
7
V OUTB V INB –V INB +V INC +
V INC –V OUTC
+-B C
-+PDIP , SOIC, TSSOP
V INA +V INA –V SS 12
34
8765-V OUTA +-+
A B V DD V OUTB V INB –V INB +
4123
-5V DD
OUT V SS MCP6001R SOT-23-5
4123
-+5V SS
V IN –
V OUT V DD V IN +MCP6001U SOT-23-5
4123
-
+5V DD
V OUT
V IN +V SS V IN –1MHz Bandwidth Low Power Op Amp
MCP6001/2/4
DS21733D-page 2  2003 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V DD  - V SS .........................................................................7.0V All Inputs and Outputs ......................V SS  -0.3V to V DD  +0.3V Difference Input Voltage .......................................|V DD  - V SS |Output Short Circuit Current ..................................continuous Current at Input Pins ...................
.................................±2mA Current at Output and Supply Pins ............................±30mA -65°C to +150°C Maximum Junction Temperature (T J )..........................+150°C ESD Protection On All Pins (HBM;MM)...............≥ 4kV; 200V † Notice: Stresses above those listed under “Maximum Rat-ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo-sure to maximum rating conditions for extended periods may affect device reliability.
PIN FUNCTION TABLE
DC ELECTRICAL SPECIFICATIONS
Name
Function
V IN +, V INA +, V INB +, V INC +, V IND +
Non-inverting Inputs V IN –, V INA –, V INB –, V INC –, V IND –Inverting Inputs V DD Positive Power Supply V SS
Negative Power Supply V OUT , V OUTA , V OUTB , V OUTC , V OUTD
Outputs
Electrical Characteristics : Unless otherwise indicated, T A  = +25°C, V DD  = +1.8V to +5.5V, V SS  = GND, V CM  = V DD /2, R L = 10k Ω to V DD /2, and V OUT ~V DD /2.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset Input Offset Voltage
V OS -7.0—+7.0mV V CM  = V SS
Input Offset Drift with Temperature ∆V OS /∆T A —±2.0—µV/°C T A = -40°C to +125°C,V CM  = V SS Power Supply Rejection
PSRR —86—dB V CM  = V SS
Input Bias Current and Impedance Input Bias Current:
I B —±1.0—pA Industrial Temperature I B —19—pA T A  = +85°C Extended T emperature I B —1100—pA T A  = +125°C
Input Offset Current
I OS —±1.0—pA Common Mode Input Impedance Z CM —1013||6—Ω||pF Differential Input Impedance Z DIFF —1013||3—Ω||pF Common Mode
Common Mode Input Range V CMR V SS − 0.3
—V DD + 0.3
V Common Mode Rejection Ratio CMRR 6076—dB V CM = -0.3V to 5.3V, V DD = 5V Open-Loop Gain
DC Open-Loop Gain (large signal)A OL
88
112
—
dB
V OUT  = 0.3V to V DD  - 0.3V, V CM =V SS Output
Maximum Output Voltage Swing V OL , V OH
V SS  + 25—V DD  − 25
mV V DD  = 5.5V Output Short-Circuit Current I SC
—±6—mA V DD = 1.8V —
±23—mA V DD = 5.5V
Power Supply Supply Voltage
V DD    1.8—  5.5V Quiescent Current per Amplifier
I Q
50
100
170
µA
I O  = 0, V DD  = 5.5V, V CM  = 5V
MCP6001/2/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V DD = +1.8V to +5.5V, and V SS = GND.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Industrial Temperature Range T A-40—+85°C
Extended Temperature Range T A-40—+125°C
Operating T emperature Range T A-40—+125°C(Note)
Storage Temperature Range T A-65—+150°C
Thermal Package Resistances
Thermal Resistance, 5L-SC70θJA—331—°C/W
Thermal Resistance, 5L-SOT-23θJA—256—°C/W
Thermal Resistance, 8L-PDIPθJA—85—°C/W
Thermal Resistance, 8L-SOIC (150mil)θJA—163—°C/W
Thermal Resistance, 8L-SOIC (208mil)θJA—118—°C/W
Thermal Resistance, 8L-MSOPθJA—206—°C/W
Thermal Resistance, 14L-PDIPθJA—70—°C/W
Thermal Resistance, 14L-SOICθJA—120—°C/W
Thermal Resistance, 14L-TSSOPθJA—100—°C/W
Note:The industrial temperature devices operate over this extended temperature range, but with reduced perfor-mance. In any case, the internal Junction Temperature (T J) must not exceed the Absolute Maximum
specification of +150°C.
2003 Microchip Technology Inc.DS21733D-page 3
MCP6001/2/4
DS21733D-page 4  2003 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T A  = +25°C, V DD  = +1.8V to +5.5V, V SS  = GND, V CM  = V DD /2, V OUT ≈V DD /2,R L = 10k Ω to V DD /2, and C L  = 60pF .
FIGURE 2-1:Input Offset Voltage
Histogram.
FIGURE 2-2:PSRR, CMRR vs.
Frequency.
FIGURE 2-3:Input Bias Current at +85°C
Histogram.
FIGURE 2-4:CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-5:Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-6:Input Bias Current at +125°C
Histogram.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
MCP6001/2/4
Note: Unless otherwise indicated, T A = +25°C, V DD = +1.8V to +5.5V, V SS = GND, V CM = V DD/2, V OUT≈V DD/2,
R L = 10kΩ to V DD/2, and C L = 60pF.
FIGURE 2-7:Input Noise Voltage Density vs. Frequency.
FIGURE 2-8:Input Offset Voltage vs. Common Mode Input Voltage at V DD = 1.8V. FIGURE 2-9:Input Offset Voltage vs. Common Mode Input Voltage at V DD = 5.5V.FIGURE 2-10:Input Offset Voltage Drift Histogram.
FIGURE 2-11:Input Offset Voltage vs. Output Voltage.
FIGURE 2-12:Output Short-Circuit Current vs. Ambient Temperature.
margin rate
2003 Microchip Technology Inc.DS21733D-page 5
MCP6001/2/4
DS21733D-page 6  2003 Microchip Technology Inc.
Note: Unless otherwise indicated, T A  = +25°C, V DD  = +1.8V to +5.5V, V SS  = GND, V CM  = V DD /2, V OUT ≈V DD /2,R L = 10k Ω to V DD /2, and C L  = 60pF .
FIGURE 2-13:Slew Rate vs. Ambient
Temperature.
FIGURE 2-14:Output Voltage Headroom vs. Output Current Magnitude.
FIGURE 2-16:Small Signal Non-Inverting
Pulse Response.
FIGURE 2-17:Large Signal Non-Inverting
Pulse Response.

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