专利名称：Plasma enhanced atomic layer deposition
(PEALD) of SiN using silicon-hydrohalide
precursors
发明人：Shinya Ueda,Taishi Ebisudani,Toshiya Suzuki
申请号：US15966717
申请日：20180430
公开号：US10580645B2
公开日：
20200303
专利内容由知识产权出版社提供
专利附图：
摘要：Methods for forming silicon nitride films are provided. In some embodiments,silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma
depositionenhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.
申请人：ASM IP HOLDING B.V.
地址：Almere NL
国籍：NL
代理机构：Knobbe, Martens, Olson & Bear LLP
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