[材料科学] 半导体材料英文缩略语
材料科学 2008-03-24 16:18:46 阅读37 评论0 字号:大中小 订阅
援引:MEMC Electronic Materials, Inc.
A
. -- Angstrom
A-defects -- Dislocation loops in Silicon formed by agglomeration of interstitials
AA -- Atomic absorption
AE -- Acid Etch
AFM -- Atomic Force Microscopy
ALCVD -- Atomic Layer Chemical Vapor Deposition
AMC -- Barrel or batch type Epi reactor (Applied Materials)
APCVD -- Atmospheric-Pressure Chemical Vapor Deposition Furnace
ASIC -- Application Specific Integrated Circuit
ASM -- a single-chamber Epi reactor (ASM America)
ASTM -- American Standard Test Method
ASTM -- American Society for Testing and Materials
B
BESOI -- Bonded and Etch Back SOI
BGSOI -- Bonded and Grind Back SOI
BJT -- Bipolar Junction Transistor
BMD -- Bulk Micro-Defects or Bulk Microdefect Density (used almost exclusively
as a measure of the oxygen precipitate density)
as a measure of the oxygen precipitate density)
BOE -- Buffered Oxide Etch
BOX -- Buried Oxide Layer
BP -- Backside Polish
BV -- Breakdown Voltage
Bvox -- Breakdown Voltage-oxide
C
°C -- Centigrade
°C/min -- Centigrade per minute
CD -- Critical Dimension
CE -- Caustic Etch
cm -- Centimeter (0.01 meter)
CMOS -- Complementary Metal Oxide Semiconductor
CMP -- Chemical Mechanical Polishing
CO -- Carbon Monoxide
CO2 -- Carbon Dioxide
COO -- Cost of Ownership
COP’s -- Crystal Originated Particles
CoQC -- Certificate Of Quality Conformance
CP -- Crystal Puller
CV -- Capacity or capacitance voltage
CVD -- Chemical Vapor Deposition
CZ -- Czochralski method of pulling single crystal
D
D-defects -- Very small voids in Silicon formed by agglomeration of vacancies
DIBL -- Drain Induced Barrier Lowering
DIC -- Differential Interference Contrast
DL -- Diffusion Length
DMOS -- Double-diffused MOS
DOE -- Design of Experiments
DOF -- Depth of Focus
DRAM -- Dynamic Random Access Memory
DSOD – Direct Surface Oxide Defect deposition
DSP -- Double Sided Polish
DZ -- Denuded Zone (depth measured from the surface that is free of oxygen
precipitates and which is denuded of interstitial oxygen (by out-diffusion))
precipitates and which is denuded of interstitial oxygen (by out-diffusion))
E
eDRAM -- Embedded Dynamic Random Access Memory
EG -- Enhanced Gettering
EEPROM -- Electrically-erasable and Programmable Read-only Memory
EPROM -- Erasable and Programmable Read-only Memory
EOT -- Equivalent Oxide Thickness
EPI -- Epitaxy
ESF -- Epi Stacking Fault
F
FBE -- Floating Body Effect
FET -- Field Effect Transistor
FD-SOI -- Fully Depleted Silicon-on-Insulator
FPD -- Flow Pattern Defect (ref. Crystal)
FPD -- Focal Plane Deviation (ref. Mechanical flatness)
FRAM -- Ferroelectric Random Access Memory
FTIR -- Fourier Transform Infra-Red Spectroscopy
FZ -- Float Zone method of Crystal Pulling
G
GBIR -- Global flatness, back-referenced
GeOI -- Germanium-on-Insulator
GFA -- Gas Fusion Analysis
GOI -- Gate Oxide Integrity
GTIR -- Global Total Indicated Reading
GUI -- Graphical User Interface
H
H2 -- Hydrogen gas
H2O2 -- Hydrogen Peroxide
HCl -- Hydrogen Chloride
HF -- Hydrofluoric Acid
HMOS -- High-performance MOS
HZ -- Hot Zone
I
IC -- Integrated Circuits
IDM -- Integrated Device Manufacturer
IG -- Internal Gettering
IGBT -- Insulated Gate Bipolar Transistor
IQC -- Incoming Quality Control
ISO -- International Standards Organization
ITOX -- Internal Oxidation
J
JFET -- Junction Field Effect Transistor
K
kg -- Kilogram
kN -- Kilo Newton
KOH -- Potassium Hydroxide
kP -- Kilo Pascal
KSIE -- Thousand Square Inch Equivalent
L
LAD -- Large Area Defect
Lg -- Transistor Gate Length
LLS -- Localized Light Scatterers
LLPD’s -- Large Light Point Defects
LPCVD -- Low Pressure Chemical Vapor Deposition
LPD’s -- Light Point Defects
LPD-E -- Light Point Defect, class E (a KLA-Tencor SP1 defect class)
LPD-N -- Light Point Defect, class N (a KLA-Tencor SP1 defect class)
LPD-S -- Light Point Defect, class S (a KLA-Tencor SP1 defect class)
LPE -- Liquid Phase Epitaxy
LSE -- Latex Sphere Equivalent particle size
LSI -- Large-scale Integration
LSTD -- Laser Scattering Tomographic Detection
LTO -- Low Temperature Oxide
M
M9K -- MEMC proprietary polishing machine
MBE -- Molecular Beam Epitaxy
MDZ -- Magic Denuded Zone (gettering)
MEMS -- Micro-ElectroMechanical System
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